ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,762, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferroelectric memory device compris... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,763, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device assembly with a leaker device" was invented b... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,764, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho). "Thin film transistor deck selection in a memory device" was... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,765, issued on Aug. 25, was assigned to SK HYNIX INC. (Icheon-si, South Korea). "Semiconductor device having improved operating characteris... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,766, issued on Aug. 25, was assigned to Cirrus Logic Inc. (Austin, Texas). "Multi-level memristor elements" was invented by John P. Lesso (... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,767, issued on Aug. 25, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris). "Transistor control device ... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,768, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device and electronic system i... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,769, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor package" was invented by Kyung... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,770, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package" was invented by Yongj... और पढ़ें
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,771, issued on Aug. 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "3D memory cell with dual-side contacts and me... और पढ़ें